 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BAW101S High voltage double diode Product specification 2003 May 13 Philips Semiconductors Product specification High voltage double diode FEATURES * Small plastic SMD package * High switching speed: max. 50 ns * High continuous reverse voltage: 300 V * Electrically insulated diodes. APPLICATIONS * High voltage switching * Automotive * Communication. DESCRIPTION The BAW101S is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small SOT363 plastic SMD package. MARKING TYPE NUMBER BAW101S Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. Fig.1 MARKING CODE(1) K2 1 Top view handbook, halfpage BAW101S PINNING PIN 1 2 3 4 5 6 anode 1 n.c. cathode 2 anode 2 n.c. cathode 1 DESCRIPTION 6 5 4 6 5 4 2 3 MBL892 1 2 3 Simplified outline (SOT363) and symbol. 2003 May 13 2 Philips Semiconductors Product specification High voltage double diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode VR VRRM IF IFRM IFSM Ptot Tstg Tj Tamb Note 1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2. ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per diode VBR(R) VF IR trr Cd Note 1. Pulse test: pulse width = 300 s; = 0.02. reverse breakdown voltage forward voltage reverse current reverse recovery time diode capacitance IR = 100 A IF = 100 mA; note 1 VR = 250 V VR = 250 V; Tamb = 150 C 300 - - - PARAMETER CONDITIONS MIN. continuous reverse voltage series connection repetitive peak reverse voltage series connection continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; t = 1 s total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 25 C; note 1 single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 - - - - - - - - - -65 - -65 PARAMETER CONDITIONS MIN. BAW101S MAX. UNIT 300 600 300 600 250 140 625 4.5 350 +150 150 +150 V V V V mA mA mA A mW C C C MAX. - 1.1 150 50 50 2 UNIT V V nA A ns pF when switched from IF = 30 mA to IR = 30 mA; - RL = 100 ; measured at IR = 3 mA VR = 0 V; f = 1 MHz - 2003 May 13 3 Philips Semiconductors Product specification High voltage double diode THERMAL CHARACTERISTICS SYMBOL Rth j-s Rth j-a Notes 1. One or more diodes loaded. 2. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm2. GRAPHICAL DATA MLE057 BAW101S PARAMETER thermal resistance from junction to soldering point thermal resistance from junction to ambient CONDITIONS note 1 note 2 VALUE 255 357 UNIT K/W K/W handbook, halfpage 300 handbook, halfpage 600 MBG384 IF (mA) 200 IF (mA) (1) (1) (2) (3) 400 100 (2) 200 0 0 50 100 200 150 Tamb (C) (2) Double diode loaded. 0 0 1 VF (V) 2 (1) Single diode loaded. Device mounted on an FR4 printed-circuit board. Cathode-lead mounting pad = 1 cm2. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.3 Forward current as a function of forward voltage. 2003 May 13 4 Philips Semiconductors Product specification High voltage double diode BAW101S 102 handbook, full pagewidth IFSM (A) MBG703 10 1 10-1 1 Based on square wave currents. Tj = 25 C prior to surge. 10 102 103 tp (s) 104 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 102 handbook, halfpage IR (A) 10 MLE058 handbook, halfpage 0.6 MLE059 Cd (pF) 0.5 (1) (2) 1 0.4 10-1 0.3 10-2 0 50 100 150 Tj (C) 200 0.2 0 2 4 6 8 VR (V) 10 (1) VR = VRMAX: maximum values. (2) VR = VRMAX: typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 2003 May 13 5 Philips Semiconductors Product specification High voltage double diode BAW101S handbook, halfpage 400 MLE060 VR (V) 300 200 100 0 0 50 100 200 150 Tamb (C) Fig.7 Maximum permissible continuous reverse voltage as a function of ambient temperature. 2003 May 13 6 Philips Semiconductors Product specification High voltage double diode PACKAGE OUTLINE Plastic surface mounted package; 6 leads BAW101S SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 2003 May 13 7 Philips Semiconductors Product specification High voltage double diode DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION BAW101S This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 May 13 8 Philips Semiconductors Product specification High voltage double diode NOTES BAW101S 2003 May 13 9 Philips Semiconductors Product specification High voltage double diode NOTES BAW101S 2003 May 13 10 |
Price & Availability of BAW101S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |